| Part# |
Description |
Make |
Avail. |
Price |
Qty. |
|
| SI2316DS-T1-E3 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,2.9A I(D),TO-236 RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
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|
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|
| SI2318DS-T1-E3 |
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,3A I(D),SOT-23 |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI2319DS-T1 |
TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,2.3A I(D),TO-236 |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI2323DS-T1-E3 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-20V
Continuous Drain Current, Id:-4.7A
On-Resistance, Rds(on):0.039ohm
Rds(on) Test Voltage, Vgs:-4.5V
Package/Case:SOT-23
Drain-Source Breakdown Voltage:-20V RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI2328DS-T1 |
MOSFET
Transistor Polarity:N Channel
Drain Source Voltage, Vds:100V
Continuous Drain Current, Id:1.15A
On-Resistance, Rds(on):250mohm
Rds(on) Test Voltage, Vgs:10V
Package/Case:SOT-23
Drain-Source Breakdown Voltage:100V RoHS Compliant: No |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI2328DS-T1-E3 |
MOSFET
Transistor Polarity:N Channel
Drain Source Voltage, Vds:100V
Continuous Drain Current, Id:1.15A
On-Resistance, Rds(on):250mohm
Rds(on) Test Voltage, Vgs:10V
Package/Case:SOT-23
Drain-Source Breakdown Voltage:100V RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI2331DS-T1-E3 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.2A I(D),TO-236 |
VISHAY SILICONIX |
Available |
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|
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|
| SI2333DS-T1 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-12V
Continuous Drain Current, Id:-4.1A
On-Resistance, Rds(on):0.032ohm
Rds(on) Test Voltage, Vgs:-4.5V
Package/Case:SOT-23
Leaded Process Compatible:No RoHS Compliant: No |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI2333DS-T1-E3 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-12V
Continuous Drain Current, Id:-4.1A
On-Resistance, Rds(on):0.032ohm
Rds(on) Test Voltage, Vgs:-4.5V
Package/Case:SOT-23
Leaded Process Compatible:Yes RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI2335DS-T1 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-12V
Continuous Drain Current, Id:-3.2A
On-Resistance, Rds(on):0.051ohm
Rds(on) Test Voltage, Vgs:-4.5V
Package/Case:SOT-23
Leaded Process Compatible:No RoHS Compliant: No |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI2335DS-T1-E3 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-12V
Continuous Drain Current, Id:-4A
On-Resistance, Rds(on):51mohm
Rds(on) Test Voltage, Vgs:-4.5V
Package/Case:TO-236
Leaded Process Compatible:Yes RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI2341DS |
P-CHANNEL 30-V (D-S) MOSFET |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI2343DS-T1-E3 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-30V
Continuous Drain Current, Id:-4A
On-Resistance, Rds(on):53mohm
Rds(on) Test Voltage, Vgs:-10V
Package/Case:TO-236
Continuous Drain Current - 25 Deg C:-4.0uA RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
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|
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|
| SI3424DV-T1-E3 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,5A I(D),TSOP |
VISHAY SILICONIX |
Available |
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|
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|
| SI3430DV-T1-E3 |
MOSFET
Transistor Polarity:N Channel
Drain Source Voltage, Vds:100V
Continuous Drain Current, Id:2.4A
On-Resistance, Rds(on):0.185ohm
Package/Case:6-TSOP |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI3441BDV-T1-E3 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-20V
Continuous Drain Current, Id:-2.45A
On-Resistance, Rds(on):0.09ohm
Rds(on) Test Voltage, Vgs:-4.5V
Package/Case:6-TSOP
Leaded Process Compatible:Yes RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI3442BDV-T1-E3 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3A I(D),TSOP |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI3443BDV-T1 |
P-Ch MOSFET TSOP-6 20V 60mohm @ 4.5V |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI3443DV-T1 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.4A I(D),TSOP |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI3443DV-T1-E3 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.4A I(D),TSOP RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
request quote |
|
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|
| SI3443DVT1 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.4A I(D),TSOP |
VISHAY SILICONIX |
Available |
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|
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|
| SI3445DV-T1-E3 |
TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,5.6A I(D),TSOP RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
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|
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|
| SI3446DV |
MOSFET
Transistor Polarity:N Channel
Drain Source Voltage, Vds:20V
Continuous Drain Current, Id:5.3A
On-Resistance, Rds(on):0.045ohm
Rds(on) Test Voltage, Vgs:4.5V
Package/Case:6-TSOP
Leaded Process Compatible:No RoHS Compliant: No |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI3446DV-T1-E3 |
MOSFET
Transistor Polarity:N Channel
Drain Source Voltage, Vds:20V
Continuous Drain Current, Id:5.3A
On-Resistance, Rds(on):0.045ohm
Rds(on) Test Voltage, Vgs:4.5V
Package/Case:6-TSOP
Leaded Process Compatible:Yes RoHS Compliant: Yes |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|
| SI3447BDV-T1 |
MOSFET
Transistor Polarity:P Channel
Drain Source Voltage, Vds:-12V
Continuous Drain Current, Id:-4.5A
On-Resistance, Rds(on):0.04ohm
Rds(on) Test Voltage, Vgs:-4.5V
Package/Case:6-TSOP
Leaded Process Compatible:No RoHS Compliant: No |
VISHAY SILICONIX |
Available |
request quote |
|
request quote
|