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SI2302ADS-T1 MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:20V Continuous Drain Current, Id:2.1A On-Resistance, Rds(on):0.085ohm Rds(on) Test Voltage, Vgs:4.5V Package/Case:SOT-23 Leaded Process Compatible:No RoHS Compliant: No VISHAY SILICONIX Available request quote request quote
SI2302ADS-T1-E3 MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:20V Continuous Drain Current, Id:2.1A On-Resistance, Rds(on):0.085ohm Rds(on) Test Voltage, Vgs:4.5V Package/Case:SOT-23 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2303ADS-T1 MOSFET Transistor Polarity:P Channel Continuous Drain Current, Id:-1.3uA On-Resistance, Rds(on):0.46ohm Package/Case:SOT-23 Leaded Process Compatible:No Mounting Type:Surface Mount Peak Reflow Compatible (260 C):No RoHS Compliant: No VISHAY SILICONIX Available request quote request quote
SI2303BDS-T1 MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-30V Continuous Drain Current, Id:-1.49uA On-Resistance, Rds(on):0.38ohm Rds(on) Test Voltage, Vgs:-10V Package/Case:SOT-23 Leaded Process Compatible:No RoHS Compliant: No VISHAY SILICONIX Available request quote request quote
SI2303BDS-T1-E3 MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-30V Continuous Drain Current, Id:-1.49uA On-Resistance, Rds(on):0.38ohm Rds(on) Test Voltage, Vgs:-10V Package/Case:SOT-23 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2304BDS MOSFET, N SOT-23MOSFET, N SOT-23 Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:30V Case style:SOT-23 Current, Id cont:2.6A Current, Idm pulse:10A Power, Pd:0.75W Resistance, Rds on:0.07R SMD:1 Current, Id RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2305DS-T1 MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-8V Continuous Drain Current, Id:3.5A On-Resistance, Rds(on):0.052ohm Rds(on) Test Voltage, Vgs:-4.5V Package/Case:SOT-23 Leaded Process Compatible:No RoHS Compliant: No VISHAY SILICONIX Available request quote request quote
SI2305DS-T1-E3 MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-8V Continuous Drain Current, Id:3.5A On-Resistance, Rds(on):52mohm Rds(on) Test Voltage, Vgs:-4.5V Package/Case:TO-236 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2306BDS-T1-E3 MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:30V Continuous Drain Current, Id:3.16A On-Resistance, Rds(on):0.094ohm Rds(on) Test Voltage, Vgs:10V Package/Case:SOT-23 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2306DS-T1-E3 TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,3.5A I(D),SOT-23 VISHAY SILICONIX Available request quote request quote
SI2307BDS-T1-E3 TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.5A I(D),SOT-23 VISHAY SILICONIX Available request quote request quote
SI2307DS-T1 MOSFET Transistor Polarity:P Channel Continuous Drain Current, Id:-3A On-Resistance, Rds(on):0.14ohm Package/Case:SOT-23 Leaded Process Compatible:No Mounting Type:Surface Mount Peak Reflow Compatible (260 C):No RoHS Compliant: No VISHAY SILICONIX Available request quote request quote
SI2307DS-T1-E3 MOSFET Transistor Polarity:P Channel Continuous Drain Current, Id:-3A On-Resistance, Rds(on):0.14ohm Package/Case:SOT-23 Leaded Process Compatible:Yes Mounting Type:Surface Mount Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2308DS-T1 TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),SOT-23 VISHAY SILICONIX Available request quote request quote
SI2308DS-T1-E3 TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),SOT-23 VISHAY SILICONIX Available request quote request quote
SI2309DS MOSFET, P SOT-23MOSFET, P SOT-23 Transistor type:MOSFET Transistor polarity:P Voltage, Vds max:60V Case style:SOT-23 Current, Id cont:1.25A Current, Idm pulse:8A Power, Pd:1.25W Resistance, Rds on:0.34R SMD:1 Depth, RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2309DS-T1-E3 MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-60V Continuous Drain Current, Id:-1.25A On-Resistance, Rds(on):0.55ohm Rds(on) Test Voltage, Vgs:-10V Package/Case:SOT-23 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2311DS-T1-E3 MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-8V Continuous Drain Current, Id:-3A On-Resistance, Rds(on):0.045ohm Rds(on) Test Voltage, Vgs:-4.5V Package/Case:SOT-23 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2312BDS-T1-E3 MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:20V Continuous Drain Current, Id:5A Package/Case:TO-236 VISHAY SILICONIX Available request quote request quote
SI2312DS-T1-E3 MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:20V Continuous Drain Current, Id:4.9A On-Resistance, Rds(on):33mohm Rds(on) Test Voltage, Vgs:4.5V Package/Case:TO-236 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2314EDS-T1-E3 MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:20V Continuous Drain Current, Id:4.9A On-Resistance, Rds(on):33mohm Rds(on) Test Voltage, Vgs:4.5V Package/Case:TO-236 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2315BDS-T1-E3 MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-12V Continuous Drain Current, Id:-3A On-Resistance, Rds(on):0.05ohm Rds(on) Test Voltage, Vgs:-4.5V Package/Case:SOT-23 Leaded Process Compatible:Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2315DS-T1 MOSFET Continuous Drain Current, Id:3.2A On-Resistance, Rds(on):0.05ohm Package/Case:SOT-23 Drain-Source Breakdown Voltage:-12V Leaded Process Compatible:No Mounting Type:Surface Mount Peak Reflow Compatible (260 C):No RoHS Compliant: No VISHAY SILICONIX Available request quote request quote
SI2315DS-T1-E3 MOSFET Continuous Drain Current, Id:3.2A On-Resistance, Rds(on):0.05ohm Package/Case:SOT-23 Drain-Source Breakdown Voltage:-12V Leaded Process Compatible:Yes Mounting Type:Surface Mount Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes VISHAY SILICONIX Available request quote request quote
SI2316DS-T1 TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,2.9A I(D),TO-236 VISHAY SILICONIX Available request quote request quote

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